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Enhanced X-ray diffraction for SiGe and SiGeC


Book ID
104367033
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
848 KB
Volume
17
Category
Article
ISSN
0961-1290

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Process control of Si/SiGe heterostructu
✍ Tom Ryan πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 97 KB

The introduction of a silicon-germanium epitaxial layer in the base of a bipolar transistor brings about significant gains in speed. SiGe heterojunction bipolar transistors (HBTs) are now challenging GaAs in its traditional stronghold of wireless communications. But this new process step introduces