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Enhanced electron trapping near channel edges in NMOS transistors

✍ Scribed by Balasinski, A.; Ma, T.-P.

Book ID: 114534660
Publisher: IEEE
Year: 1992
Tongue: English
Weight: 729 KB
Volume: 39
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.141234

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