✦ LIBER ✦
Gate oxide thickness dependence of edge charge trapping in NMOS transistors caused by charge injection under constant-current stress
✍ Scribed by Chen, T.P.; Jiayi Huang; Tse, M.S.; Tan, S.S.; Ang, C.H.
- Book ID
- 114617106
- Publisher
- IEEE
- Year
- 2003
- Tongue
- English
- Weight
- 245 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0018-9383
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