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Enhanced device performance of AlGaN/GaN HEMTs using HfO 2 high- k dielectric for surface passivation and gate oxide

✍ Scribed by Liu, Chang; Chor, Eng Fong; Tan, Leng Seow

Book ID: 124159875
Publisher: Institute of Physics
Year: 2007
Tongue: English
Weight: 462 KB
Volume: 22
Category: Article
ISSN: 0268-1242
DOI: 10.1088/0268-1242/22/5/011

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