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Comparison of SiO2-based double passivation scheme by e-beam evaporation and PECVD for surface passivation and gate oxide in AlGaN/GaN HEMTs
✍ Scribed by Wang, Cong; Cho, Sung-Jin; Kim, Nam-Young
- Book ID
- 120379569
- Publisher
- Elsevier Science
- Year
- 2013
- Tongue
- English
- Weight
- 1006 KB
- Volume
- 109
- Category
- Article
- ISSN
- 0167-9317
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