The defects produced in 4H-SiC epitaxial layers by irradiation with 800 keV C + were characterized by Low Temperature Photoluminescence. Ion beam irradiation induces the formation of some sharp lines in the wavelength range 428-441 nm of the photoluminescence spectra, that are typically known as ''a
β¦ LIBER β¦
Enhanced defects recombination in ion irradiated SiC
β Scribed by G. Izzo; G. Litrico; F. Grassia; L. Calcagno; G. Foti
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 423 KB
- Volume
- 268
- Category
- Article
- ISSN
- 0168-583X
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