The defects produced in 4H-SiC epitaxial layers by irradiation with 800 keV C + were characterized by Low Temperature Photoluminescence. Ion beam irradiation induces the formation of some sharp lines in the wavelength range 428-441 nm of the photoluminescence spectra, that are typically known as ''a
Energetics of defects in β-SiC under irradiation
✍ Scribed by Y. Watanabe; K. Morishita; A. Kohyama; H.L. Heinisch; F. Gao
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 508 KB
- Volume
- 267
- Category
- Article
- ISSN
- 0168-583X
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