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Energy of substitution of atoms in the epitaxial graphene-buffer layer-SiC substrate system

✍ Scribed by S. Yu. Davydov


Book ID
114992527
Publisher
SP MAIK Nauka/Interperiodica
Year
2012
Tongue
English
Weight
221 KB
Volume
54
Category
Article
ISSN
1063-7834

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A characterization of the graphitic overlayer that forms on 4H-SiCð0 0 0 1Þ substrates heated for ten minutes to temperatures T > 1350 °C under vacuum conditions has been performed. X-ray photoelectron spectroscopy of the C-face reveals the presence of graphitic carbon with a thickness that increas