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AFM study of ridges in few-layer epitaxial graphene grown on the carbon-face of 4H–SiC

✍ Scribed by Gyan Prakash; Michael A. Capano; Michael L. Bolen; Dmitry Zemlyanov; Ronald G. Reifenberger

Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 720 KB
Volume: 48
Category: Article
ISSN: 0008-6223
DOI: 10.1016/j.carbon.2010.02.026

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✦ Synopsis

A characterization of the graphitic overlayer that forms on 4H-SiCð0 0 0 1Þ substrates heated for ten minutes to temperatures T > 1350 °C under vacuum conditions has been performed.

X-ray photoelectron spectroscopy of the C-face reveals the presence of graphitic carbon with a thickness that increases with growth temperature. Parallel atomic force microscope (AFM) studies find a mesh-like network of ridges with high curvature that bound atomically flat, tile-like facets of few-layer graphene (FLG). By imaging the network that develops on FLG, it is possible to map out the regions where the elastic energy is concentrated.

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