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SiC Substrate effects on electron transport in the epitaxial graphene layer

✍ Scribed by Arslan, Engin; Çakmakyapan, Semih; Kazar, Özgür; Bütün, Serkan; Lişesivdin, Sefer Bora; Cinel, Neval A.; Ertaş, Gülay; Ardalı, Şükrü; Tıraş, Engin; Jawad-ul-Hassan, ; Janzén, E.; Özbay, Ekmel

Book ID: 125385149
Publisher: The Korean Institute of Metals and Materials
Year: 2014
Tongue: English
Weight: 353 KB
Volume: 10
Category: Article
ISSN: 1738-8090
DOI: 10.1007/s13391-013-3159-2

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## Abstract Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. However, for possible future applications it is important to understand the electron properties of this material and how it is affected by the interaction with the SiC interface. Here we r