Nitrogen effect on optical gain and radi
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M. Debbichi; A. Ben Fredj; M. SaΓ―d; J.-L. Lazzari; Y. Cuminal; P. Christol
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Article
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2008
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Elsevier Science
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English
β 205 KB
Dilute-nitride InAsN/GaSb/InAsN ''W'' laser structure is theoretically investigated and compared with similar nitride-free InAs/GaSb/InAs ''W'' structure. The two laser diodes, to be grown on (0 0 1) InAs substrate, are designed to operate at 3.3 mm at room temperature. Their performances are evalua