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Energy-band structure and optical gain in strained InAs(N)/GaSb/InAs(N) quantum well lasers.

✍ Scribed by Ridene, S.; Debbichi, M.; Ben fredj, A; Said, M.; Bouchriha, H.


Book ID
121800037
Publisher
American Institute of Physics
Year
2008
Tongue
English
Weight
442 KB
Volume
104
Category
Article
ISSN
0021-8979

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Dilute-nitride InAsN/GaSb/InAsN ''W'' laser structure is theoretically investigated and compared with similar nitride-free InAs/GaSb/InAs ''W'' structure. The two laser diodes, to be grown on (0 0 1) InAs substrate, are designed to operate at 3.3 mm at room temperature. Their performances are evalua