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Dependence of hole effective mass on nitrogen concentration in W-type strained InAs(N)/GaSb/InAs(N) quantum well lasers

✍ Scribed by S. Ridene; M. Debbichi; M. Saïd; H. Bouchriha


Book ID
111623899
Publisher
Springer
Year
2012
Tongue
English
Weight
424 KB
Volume
85
Category
Article
ISSN
1434-6036

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