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Emission and elastic strain in InGaAs/GaAs quantum wells with embedded InAs quantum dots

✍ Scribed by L. G. Vega-Macotela; G. Polupan; Ye. Shcherbyna


Book ID
112182444
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
345 KB
Volume
9
Category
Article
ISSN
1862-6351

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1.3 µm InAs/GaAs quantum dots with broad
✍ Tian, Peng ;Huang, Lirong ;Jiang, Bo ;Fei, Shuping ;Huang, Dexiu 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 306 KB

## Abstract InAs/GaAs quantum dot (QD) structures with broad emission spectra are grown by metal‐organic chemical vapor deposition. The effects of Indium composition of InGaAs strain‐reducing layer and InAs deposited coverage on the optical properties and structural characterization of QDs are inve