✦ LIBER ✦

1.3 µm InAs/GaAs quantum dots with broad emission spectra

✍ Scribed by Tian, Peng ;Huang, Lirong ;Jiang, Bo ;Fei, Shuping ;Huang, Dexiu

Book ID: 105366196
Publisher: John Wiley and Sons
Year: 2010
Tongue: English
Weight: 306 KB
Volume: 207
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.201026232

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✦ Synopsis

Abstract

InAs/GaAs quantum dot (QD) structures with broad emission spectra are grown by metal‐organic chemical vapor deposition. The effects of Indium composition of InGaAs strain‐reducing layer and InAs deposited coverage on the optical properties and structural characterization of QDs are investigated using photoluminescence (PL) and atomic force microscopy. It is found that through appropriately selecting growth parameters, the full width at half maximum of PL spectrum reaches up to 183 nm around 1.3 µm, covering the range from 1156 to 1339 nm.

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