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Emission and strain in InGaAs/GaAs quantum wells with InAs quantum dots obtained at different temperatures

✍ Scribed by R.L. Mascorro Alquicira; J.L. Casas Espinola; E. Velázquez Lozada; G. Polupan; L. Shcherbyna

Book ID
119373164
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
403 KB
Volume
52
Category
Article
ISSN
0749-6036

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The structural and optical qualities of superlattice InAs-GaAs structures and quantum dots (QDs), grown by molecular beam epitaxy (MBE) at low (250 1C) and normal ($450 1C) growth temperatures, have been investigated. The InAs layers (3 monolayers) were grown under conditions where only the indium b