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Ellipsometric investigation of porous silicon layers for the design of a DBR

✍ Scribed by Bardaoui, A. (author);Boudaya, L. (author);Abdellaoui, T. (author);Ben Sédrine, N. (author);Lajnef, M. (author);Chtourou, R. (author)


Book ID
121289572
Publisher
EDP Sciences
Year
2008
Tongue
English
Weight
309 KB
Volume
43
Category
Article
ISSN
1286-0042

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Porous silicon (PS) layers are formed on p+-type silicon wafers by electrochemical anodization in hydrofluoric acid solutions. Microechography and acoustic signature, V(z), have been performed at 1.5 GHz and 600 MHz, respectively, in order to study the elastic properties of PS layers. The thicknesse