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In situ spectroscopic ellipsometric investigation of vacuum annealed and oxidized porous silicon layers

✍ Scribed by M Fried; H Wormeester; E Zoethout; T Lohner; O Polgár; I Bársony


Book ID
114086355
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
219 KB
Volume
313-314
Category
Article
ISSN
0040-6090

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## Abstract The dependence of humidity adsorption in porous silicon (PS) layers on the fabrication conditions (current density and oxidation) has been investigated. As‐prepared and additionally oxidized PS layers have been investigated using physical gas (N~2~) adsorption measurement at 77 K, water