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Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide

✍ Scribed by Perea, Ernesto H.; Mendez, Emilio E.; Fonstad, Clifton G.

Book ID
120261765
Publisher
American Institute of Physics
Year
1980
Tongue
English
Weight
474 KB
Volume
36
Category
Article
ISSN
0003-6951

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## Abstract This paper describes a low‐noise, high‐gain, single‐sideband, downconverting receiver module developed for point‐to‐point telecommunications in the 82–104‐GHz range. Two indium phosphide (InP) and two gallium arsenide (GaAs) monolithic microwave integrated circuits (MMICs) are used in t