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A new approach to MOCVD of indium phosphide and gallium-indium arsenide

✍ Scribed by R.H. Moss; J.S. Evans

Book ID
107789272
Publisher
Elsevier Science
Year
1981
Tongue
English
Weight
523 KB
Volume
55
Category
Article
ISSN
0022-0248

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A 176-190 GHz transmitter module using i
A 176-190 GHz transmitter module using indium phosphide and gallium arsenide MMICs
✍ John W. Archer; Mei Gan Shen πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 127 KB

## Abstract This paper describes a double‐sideband, upconverting transmitter module with a potential application to future‐generation point‐to‐point telecommunications in the 176–190‐GHz band. The multichip module incorporates indium phosphide (InP) and gallium arsenide (GaAs) monolithic microwave