✦ LIBER ✦

Electrophysical Properties of Silicon Depending on Thermal Processing and Neutron Transmutation Doping Effects

✍ Scribed by Burak, A. G. ;Dubovoi, V. K. ;Svechnikov, G. S. ;Smertenko, P. S.

Publisher: John Wiley and Sons
Year: 1991
Tongue: English
Weight: 207 KB
Volume: 124
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2211240146

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effect of annealing and hydrogenation on

Effect of annealing and hydrogenation on neutron-transmutation-doped GaAs

✍ Cho, H. D. ;Shon, Y. ;Kang, T. W. ;Kim, H. J. ;Shim, H. S. ;Kim, T. W. 📂 Article 📅 1994 🏛 John Wiley and Sons 🌐 English ⚖ 525 KB

Effect of high hydrostatic pressure on t

Effect of high hydrostatic pressure on the electrophysical properties of doped silicon crystals and devices based on them

✍ S.Z. Zainabidinov; P.I. Baranskiy; I.N. Karimov; A.R. Turaev; Kh.Kh. Karimberdie 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 217 KB

The effect of electron radiation on ther

The effect of electron radiation on thermal and electrophysical properties of n-InP

✍ Nikogosyan, S. K. ;Saakyan, V. A. 📂 Article 📅 1989 🏛 John Wiley and Sons 🌐 English ⚖ 516 KB

Effects of rapid thermal processing on o

Effects of rapid thermal processing on oxide precipitation in conventional and nitrogen-doped Czochralski silicon

✍ Ma, Xiangyang ;Fu, Liming ;Tian, Daxi ;Cui, Can ;Yang, Deren 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 188 KB

## Abstract In this paper, the effects of vacancies introduced by rapid thermal processing (RTP) on nucleation and growth of oxide precipitates in Czochralski (Cz) silicon are elucidated. Moreover, the nitrogen and vacancy enhancement roles in oxide precipitation are differentiated through designin

Effect of charge composition on the stru

Effect of charge composition on the structure and electrophysical properties of self-bonded silicon carbide

✍ L. A. Shipilova; Yu. P. Dyban'; V. Ya. Petrovskii 📂 Article 📅 1995 🏛 Springer 🌐 English ⚖ 668 KB

Effect of rapid thermal process on oxyge

Effect of rapid thermal process on oxygen precipitation and denuded zone in nitrogen-doped silicon wafers

✍ Xuegong Yu; Deren Yang; Xiangyang Ma; Duanlin Que 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 321 KB

The effect of rapid thermal process (RTP) on the oxygen precipitation and on the denuded zone (DZ) formation in nitrogen-doped Czochralski (NCZ) silicon wafers has been investigated. The DZ can be formed at the surface of NCZ wafers subjected to RTP annealing. However, the oxygen precipitation and b