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Effect of high hydrostatic pressure on the electrophysical properties of doped silicon crystals and devices based on them

✍ Scribed by S.Z. Zainabidinov; P.I. Baranskiy; I.N. Karimov; A.R. Turaev; Kh.Kh. Karimberdiev

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
217 KB
Volume
38
Category
Article
ISSN
0038-1101

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