In order to clarify the electronic properties of the ternary compound semiconductor GaPN, in a zinc-blende structure, a simple pseudopotential scheme (EPM), within an effective potential (VCA), is proposed. The effects of disorder and spin-orbit coupling are neglected. Various quantities, such as en
Electronic structure of thin films of zinc-blende GaN(0 0 1): LCAO calculation
β Scribed by B. Stankiewicz; L. Jurczyszyn
- Publisher
- Elsevier Science
- Year
- 1999
- Tongue
- English
- Weight
- 224 KB
- Volume
- 54
- Category
- Article
- ISSN
- 0042-207X
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