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Electronic structure of modulation-doped heterostructures: electric field effects

✍ Scribed by K.F Ilaiwi; M.I El-Kawni; M Tomak

Book ID
102616986
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
94 KB
Volume
24
Category
Article
ISSN
0749-6036

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✦ Synopsis

Self-consistent energy levels of electrons in modulation-doped GaAs/Ga 1-x Al x As heterostructures are presented and their dependence on various device parameters are examined. The results of the calculation of the electric field effects on the shape of the confinement potential, the electron concentration and the shape of the wavefunction are presented.

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Self-consistent modeling ofC–Vand electr
Self-consistent modeling ofC–Vand electronic properties of strained heterostructure modulation-doped field-effect transistors
✍ J.E. Manzoli; M.A. Romero; O. HipΓ³lito πŸ“‚ Article πŸ“… 1999 πŸ› Elsevier Science 🌐 English βš– 68 KB

A self-consistent solution of SchrΓΆdinger and Poisson equations is implemented in order to provide a model for the capacitance-voltage characteristics of strained modulationdoped field-effect transistors. The proposed Hamiltonian accounts for the strain caused by lattice mismatch, as well as the pos