Cyclotron resonance (CR) measurements have been carried out to evaluate the effective mass of electron in (InGaAs) n /(GaAs) n superlattices (SLs) and (InGaAs) n /(AlAs) n SLs. To clarify the dependence of cyclotron mass on the monolayer number n, we measured CR signals using pulsed high-magnetic fi
Electronic structure of InGaAs and band offsets in InGaAs/GaAs superlattices
✍ Scribed by Oloumi, M; Matthai, C C
- Book ID
- 124095861
- Publisher
- Institute of Physics
- Year
- 1991
- Tongue
- English
- Weight
- 348 KB
- Volume
- 3
- Category
- Article
- ISSN
- 0953-8984
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## Abstract We have studied structural properties of InGaAs/GaAs superlattice sample prepared by Molecular Beam Epitaxy (MBE) using high resolution X‐ray diffractometer (HRXRD). Increasing strain relaxation and defect generations are observed with the increasing Rapid Thermal Annealing (RTA) temper
Strain induced effects on the valence band structure of \(\operatorname{In}_{x} \mathrm{Ga}_{1-x} \mathrm{As}_{s} / \mathrm{In}_{y} \mathrm{Ga}_{1-y} \mathrm{As}\) \((x \approx 0.47, y \approx 0.6)\) shallow superlattices are analyzed by optical spectroscopy. The formation of minibands and the spati