Valence band structure of fractional Wannier-Stark effect shallow InGaAs/InGaAs superlattices
✍ Scribed by R. Schwedler; F. Brüggemann; A. Ziebell; B. Opitz; A. Kohl; H. Kurz
- Book ID
- 102620028
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 162 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
Strain induced effects on the valence band structure of (\operatorname{In}{x} \mathrm{Ga}{1-x} \mathrm{As}{s} / \mathrm{In}{y} \mathrm{Ga}_{1-y} \mathrm{As}) ((x \approx 0.47, y \approx 0.6)) shallow superlattices are analyzed by optical spectroscopy. The formation of minibands and the spatially indirect nature of the electron-light-hole transition are observed by photocurrent experiments. Field induced spectral changes of the photocurrent spectra are att:ibuted to Wannier-Stark localization. Heavyhole related fan diagrams are derived for all samples. In contrast, the electronlight-hole Wannier-Stark ladder appears to be very sensitive to material parameters. These results are compared with theoretical calculations of the excitonic absorption coefficient.