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Electronic structure of GeO[sub 2]-passivated interfaces of (100)Ge with Al[sub 2]O[sub 3] and HfO[sub 2]

✍ Scribed by Afanas’ev, V. V.; Stesmans, A.; Delabie, A.; Bellenger, F.; Houssa, M.; Meuris, M.

Book ID: 121716305
Publisher: American Institute of Physics
Year: 2008
Tongue: English
Weight: 739 KB
Volume: 92
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2831668

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