Electronic structure of a single-layer InN quantum well in a GaN matrix
β Scribed by Miao, M. S.; Yan, Q. M.; Van de Walle, C. G.
- Book ID
- 121804447
- Publisher
- American Institute of Physics
- Year
- 2013
- Tongue
- English
- Weight
- 721 KB
- Volume
- 102
- Category
- Article
- ISSN
- 0003-6951
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## Abstract The electronic structures of a monolayer quantum well (MLQW) in GaN are investigated by means of the firstβprinciples full potential linearized augmented plane waves method within the local density approximation (LDA). A superβcell with periodic boundaries is used to study such systems.
We have investigated electron Hall mobility of high-quality GaN/AlGaN multiple quantum wells (QWs). Electron mobility was enhanced from 875 to 1600 cm 2 /Vs at room temperature in GaN/Al 0.58 Ga 0.42 N QWs when the number of QWs increased from 1 to 10. Atomic force microscopy analysis shows that the