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Growth Optimization of an Electron Confining InN/GaN Quantum Well Heterostructure

✍ Scribed by E. Dimakis; E. Iliopoulos; M. Kayambaki; K. Tsagaraki; A. Kostopoulos; G. Konstantinidis; A. Georgakilas


Book ID
107453557
Publisher
Springer US
Year
2007
Tongue
English
Weight
264 KB
Volume
36
Category
Article
ISSN
0361-5235

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GaN on Si(111): From Growth Optimization
✍ F. Semond; B. Damilano; S. VΓ©zian; N. Grandjean; M. Leroux; J. Massies πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 171 KB πŸ‘ 2 views

In this paper, we report on the growth of GaN films and AlGaN/GaN multiple quantum wells (MQWs) on Si(111) substrates by molecular beam epitaxy using ammonia as nitrogen source. A smooth layer-by-layer two-dimensional growth mode allows to obtain reflection high-energy electron diffraction intensity