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Electronic structure at interfaces of cubic Gd2O3 with embedded Si nanocrystals

✍ Scribed by M. Badylevich; S. Shamuilia; V.V. Afanas’ev; A. Stesmans; A. Laha; H.J. Osten; A. Fissel

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
349 KB
Volume
85
Category
Article
ISSN
0167-9317

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✦ Synopsis

The electronic structure of silicon nanocrystals ($2-6 nm in size) embedded in cubic Gd 2 O 3 epi-layers grown on (1 1 1) Si was analyzed using spectroscopic ellipsometry and photocharging methods. With decreasing nanocrystal size down to the 2 nm range, the optical absorption exhibits a spectacular shift in spectral threshold to 2.9 ± 0.1 eV, as compared to the 1.12 eV absorption edge of the bulk Si crystal. This shift suggests a significant influence of quantum confinement on the Si nanocrystal/oxide interface band diagram, which effect is shown to be predominantly caused by an upshift of the nanocrystal conduction band.

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