𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A study of the electronic structure and Schottky barriers at reconstructed Sn/Si interfaces

✍ Scribed by H.T. Anyele; A.A. Cafolla; C.C. Matthai


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
332 KB
Volume
70-71
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Schottky barrier at the Al/Si(111) doped
✍ V.G. Zavodinsky; I.A. Kuyanov πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 87 KB

Using the local-density approximation method we have investigated a cluster model of the Al/Si(111) interface. P atoms were placed in the fifth silicon double-atomic layer (DAL) counting from the interface. The second DAL was doped with either Ga or As. The Schottky barrier height was found to be 0.

The Electronic Band Structure of Si/SiO2
✍ M. P. J. Punkkinen; T. Korhonen; K. Kokko; I. J. VΓ€yrynen πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 122 KB πŸ‘ 2 views

The mechanism of the visible luminescence in Si nanostructures is a matter of great interest. Lockwood et al. presented strong experimental evidence for the light emission due to quantum confinement in amorphous Si/SiO 2 superlattices in which silicon layers form two-dimensional quantum wells . Both