A study of the electronic structure and Schottky barriers at reconstructed Sn/Si interfaces
β Scribed by H.T. Anyele; A.A. Cafolla; C.C. Matthai
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 332 KB
- Volume
- 70-71
- Category
- Article
- ISSN
- 0169-4332
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Using the local-density approximation method we have investigated a cluster model of the Al/Si(111) interface. P atoms were placed in the fifth silicon double-atomic layer (DAL) counting from the interface. The second DAL was doped with either Ga or As. The Schottky barrier height was found to be 0.
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