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Electronic structure and optical properties of N-Zn co-doped β-Ga2O3

✍ Scribed by JinLiang Yan; YinNv Zhao

Book ID
118814481
Publisher
Science in China Press (SCP)
Year
2012
Tongue
English
Weight
855 KB
Volume
55
Category
Article
ISSN
1672-1799

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The N-doped b-Ga 2 O 3 films were grown on Si and quartz substrates by RF magnetron sputtering in different ammonia partial pressure ratios (from 0% to 30%). The influence of ammonia partial pressure ratios and annealing treatment on the optical and structural properties were studied. The microstruc