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Fabrication and characteristics of N-dopedβ-Ga2O3nanowires

✍ Scribed by L. L. Liu; M. K. Li; D. Q. Yu; J. Zhang; H. Zhang; C. Qian; Z. Yang


Publisher
Springer
Year
2010
Tongue
English
Weight
709 KB
Volume
98
Category
Article
ISSN
1432-0630

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✍ Yang, Qing ;Yasuda, Takahiro ;Brown, Paul D. ;Tanaka, Miyoko ;Tatsuoka, Hirokazu 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 691 KB

## Abstract The defect structures of β‐Ga~2~O~3~ nanowires were characterized using transmission electron microscopy (TEM). Branched and jagged β‐Ga~2~O~3~ nanowires were obtained by the heat treatment of gallium metal with Cu~5~Si powders. The growth direction of the branched nanowire is perpendic