A large, crack-free CdGeAs 2 single crystal measuring 15 mm in diameter and 45 mm in length was grown in a vertical three-zone tubular furnace by a modified vertical Bridgman method, i.e. quasi-seed technique with small temperature gradient and descending quartz ampoule. High-purity, single phase Cd
β¦ LIBER β¦
Electronic and optical properties of bulk crystals of semiconducting orthorhombic BaSi2 prepared by the vertical Bridgman method
β Scribed by Shingo Kishino; Tomohiro Imai; Tsutomu Iida; Yoshiaki Nakaishi; Masato Shinada; Yoshifumi Takanashi; Noriaki Hamada
- Book ID
- 116600544
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 486 KB
- Volume
- 428
- Category
- Article
- ISSN
- 0925-8388
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