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Electronic and level statistics properties of Si/SiO2 quantum dots

โœ Scribed by I. Filikhin; S.G. Matinyan; B.K. Schmid; B. Vlahovic


Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
764 KB
Volume
42
Category
Article
ISSN
1386-9477

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โœ K Prabhakaran; K Sumitomo; T Ogino ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 557 KB

In this paper, we describe the nano-interface engineering of CorGerSi system, involving interface reactions. Controlled annealing causes the Co atoms to diffuse through an already formed quantum dot network fabricated on a silicon substrate and get incorporated as epitaxial CoSi . Additionally, we p