๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Electron interactions, classical integrability, and level statistics in quantum dots

โœ Scribed by Lilia Meza-Montes; Sergio E. Ulloa; Daniela Pfannkuche


Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
149 KB
Volume
1
Category
Article
ISSN
1386-9477

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Level statistics and interactions in a t
โœ Sergio E. Ulloa; Daniela Pfannkuche ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 183 KB

The energy level structure of an interacting system of electrons is analysed. The model chosen describes electrons in a semiconductor quantum dot system, whose energy levels could be accessed via finite-bias transport experiments. We find that the normalized level spacing of the system exhibits sign

Quantum decoherence of interacting elect
โœ Dmitri S. Golubev; Andrei D. Zaikin ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 393 KB

We develop a new unified theoretical approach enabling us to non-perturbatively study the effect of electron-electron interactions on weak localization in arbitrary arrays of quantum dots. Our model embraces (i) weakly disordered conductors (ii) strongly disordered conductors and (iii) metallic quan

Electron and hole levels of InAs quantum
โœ M. Henini; P.N. Brounkov; A. Polimeni; S.T. Stoddart; P.C. Main; L. Eaves; A.R. ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 110 KB

Photoluminescence, capacitance-voltage and transmission electron microscopy studies have been carried out on structures containing a sheet of a self-assembled InAs quantum dots formed in GaAs matrices after the deposition of a 1.7 ML of InAs at 480 โ€ข C. The use of n-and p-type GaAs matrices allows u