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Electron subband structure of HgCdTe metal-insulator-semiconductor heterostructures

โœ Scribed by Junhao Chu; R. Sizmann; Kun Liu; I. Nachev; F. Koch


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
269 KB
Volume
37
Category
Article
ISSN
0038-1101

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The method of metal-insulator-semiconductor (MIS) structure interface analysis, based on applying a direct current pulse of preset amplitude to a MIS structure, is proposed. The variation of the voltage across the MIS structure is recorded while the current flows. The method allows measurement of in