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Electron spin resonance study of defects in low-κ oxide insulators (κ = 2.5–2.0)

✍ Scribed by V.V. Afanas’ev; K. Keunen; A. Stesmans; M. Jivanescu; Zs. Tőkei; M.R. Baklanov; G.P. Beyer

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 298 KB
Volume: 88
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2011.03.077

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Electron spin resonance study of defects in low-κ oxide insulators (κ&#xa0;=&#xa0;2.5–2.0)

Electron spin resonance study of defects in low-κ oxide insulators (κ = 2.5–2.0)