Ab initio study of the effect of hydroge
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Karthik Ravichandran; Wolfgang Windl
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Article
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2005
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Elsevier Science
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English
⚖ 135 KB
The previously suggested segregation model for arsenic at Si/SiO 2 interfaces based on a combined trapping/pairing model [J. Dabrowski, H.-J. Müssig, V. Zavodinsky, R. Baierle, M.J. Caldas, Phys. Rev. B 65 ( 2002) 245305] requires high binding energies for interface vacancies, which our results of ∼