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Electron relaxation times in high-carrier-density GaAs-(Ga,Al)As heterojunctions

✍ Scribed by Kusters, R.; Wittekamp, F.; Singleton, J.; Perenboom, J.; Jones, G.; Ritchie, D.; Frost, J.; André, J.-P.

Book ID
111973310
Publisher
The American Physical Society
Year
1992
Tongue
English
Weight
366 KB
Volume
46
Category
Article
ISSN
1098-0121

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We report magnetotransport experiments in high carrier density GaAs/GaoslnozAs/Gao.75Alo25As heterostructures in magnetic fields up to 50 T. At the lowest electron densities the quantized Hall effect is observed, with one subband occupied. As the density is increased, features indicating the populat