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Electron mobility in Si delta doped GaAs

✍ Scribed by P.M. Koenraad; A.F.W. van de Stadt; J.M. Shi; G.Q. Hai; N. Studart; P. Vansant; F.M. Peeters; J.T. Devreese; J.A.A.J. Perenboom; J.H. Wolter

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 241 KB
Volume: 211
Category: Article
ISSN: 0921-4526
DOI: 10.1016/0921-4526(94)01094-h

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In this paper we report abnormal non-ohmic behaviour observed in Si \(\delta\)-doped GaAs. We have performed measurements in Hall bar and Van der Pauw geometries in which electron transport phenomena can be studied by looking into the dependence of the device resistance \(\boldsymbol{R}_{x x}\) on t