Electron mobility in InO.53GaO.47As as a function of concentration and temperature
β Scribed by V.W.L. Chin; T. Osotchan; T.L. Tansley
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 316 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0026-2692
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The magnetoresistance of antidot lattices and the magnetic field dependence of the threeterminal resistance of transverse electron focusing (TEF) devices is studied in a 2DEG in the lattice-matched In 0.53 Ga 0.47 As/InP heterojunction system, as a function of temperature. Ballistic effects are obse