Remote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETs

✍ Scribed by A.M. Sonnet; R.V. Galatage; P.K. Hurley; E. Pelucchi; K. Thomas; A. Gocalinska; J. Huang; N. Goel; G. Bersuker; W.P. Kirk; C.L. Hinkle; E.M. Vogel

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 755 KB
• Volume: 88
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2011.03.120