𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Electron Irradiation Influence on Porous Silicon Electrical Parameters

✍ Scribed by Zimin, S.P. ;Zimin, D.S. ;Ryabkin, Yu.V. ;Bragin, A.N.

Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
84 KB
Volume
182
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

✦ Synopsis

Changes of dc conductivity for the porous silicon (PS) with different morphology and different pictures of the depleted areas after the irradiation with high-energy electrons (2 MeV, 2 Γ‚ 10 16 to 1 Γ‚ 10 17 cm Β± Β±2 ) are presented. PS layers of 5Β±60% porosity were formed by anodization of n-type Si (100), 4.5 W cm; n + -Si (111), 0.01 W cm; and p + -Si (111), 0.03 W cm substrates. It is shown that the dc conductivity change after the electron bombardment depends on the structural parameters of PS. Different physical models of the charge carrier transport in PS of various porosity were used for the explanation of the experimental results.

πŸ“œ SIMILAR VOLUMES

Surface effects on the electrical conduc
Surface effects on the electrical conduction of porous silicon
✍ Suk-Ho Choi; Geun-Woo Lee πŸ“‚ Article πŸ“… 1996 πŸ› Elsevier Science 🌐 English βš– 212 KB

The electrical current of porous silicon (PS) has been measured while several treatments are made to the samples. When the samples are exposed to air, the DC current increases or decreases depending on the surface conditions of the samples. These results, found to be caused by water vapors in air, c