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Influence of humidity on transport in porous silicon

✍ Scribed by JiříJ. Mareš; Jozef Krištofik; Eduard Hulicius


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
413 KB
Volume
255
Category
Article
ISSN
0040-6090

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Changes of dc conductivity for the porous silicon (PS) with different morphology and different pictures of the depleted areas after the irradiation with high-energy electrons (2 MeV, 2 Â 10 16 to 1 Â 10 17 cm ± ±2 ) are presented. PS layers of 5±60% porosity were formed by anodization of n-type Si (