Electron emission from diamond p-i-n junction diode with heavily P-doped n+ top layer

✍ Scribed by Takeuchi, D. ;Makino, T. ;Kato, H. ;Okushi, H. ;Yamasaki, S.

• Book ID: 105366436
• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 616 KB
• Volume: 208
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201100140

✦ Synopsis

Abstract

We found clear improvement in electron emission performances in low injection region of hydrogenated diamond p–i–n junction diodes with heavily phosphorous‐doped (P‐doped) n^+^ “top” layer, where the “top” layer faced to a collector electrode. The emission started just below 4.5 V, that is the built‐in potential expected as diamond p–n junction diode with boron acceptors and phosphorous donors. In this flat‐band condition, the electron emission efficiency (η) reached to 0.2% during room temperature (RT) operation, and η > 1% during 573 K operation were obtained, whereas, the previous diamond p–i–n junction diode without the heavily P‐doped top layer showed η < 10^−6^% in these temperature ranges. In such low injection region, the results indicated that direct emission of electrons injected from n‐layer to i‐layer contributed to the electron emission. With high diode current I~d~ = 80 mA, we obtained the highest emission net current I~e~ = 78 µA up to now, and the η = 0.1% during RT operation. A dependence of η upon the forward diode current suggested that there were two electron emission mechanism in the same sample. Electroluminescence results suggested that exciton‐derived electron emission might be concerned in the high current injection region.