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The physics and backward diode behavior of heavily doped single layer MoS2 based p-n junctions

✍ Scribed by Sun, Qing-Qing; Li, Yong-Jun; He, Jin-Lan; Yang, Wen; Zhou, Peng; Lu, Hong-Liang; Ding, Shi-Jing; Wei Zhang, David


Book ID
119998838
Publisher
American Institute of Physics
Year
2013
Tongue
English
Weight
1007 KB
Volume
102
Category
Article
ISSN
0003-6951

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