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1.54 μm Light emission from Er/O and Er/F doped Si p–i–n diodes grown by molecular beam epitaxy

✍ Scribed by W.-X. Ni; C.-X. Du; K.B. Joelsson; G. Pozina; G.V. Hansson

No coin nor oath required. For personal study only.

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1.54&#xa0;μm Light emission from Er/O and Er/F doped Si p–i–n diodes grown by molecular beam epitaxy