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Electron effective mass and mobility in heavily doped n-GaAsN probed by Raman scattering

✍ Scribed by IbaÌnÌez, J.; CuscoÌ, R.; AlarcoÌn-LladoÌ, E.; ArtuÌs, L.; PataneÌ, A.; Fowler, D.; Eaves, L.; Uesugi, K.; Suemune, I.

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