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Change of the electron effective mass in extremely heavily doped n-type Si obtained by ion implantation and laser annealing: M. Miyao, T. Motooka, N. Natsuaki and T. Tokuyama. Solid-St. Commun.37, 605 (1981)


Book ID
107829265
Publisher
Elsevier Science
Year
1981
Tongue
English
Weight
126 KB
Volume
21
Category
Article
ISSN
0026-2714

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