## Abstract We report a study by photoluminescence (PL), Raman scattering, and highly resolved X‐ray diffraction (HRXRD) of a series of Si‐doped n‐type GaN layers grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire (0001) with the carrier concentration of 2.3 × 10^17^ – 9 × 10^18^ cm^–3^.
Electron density gradients in ammonothermally grown Si-doped GaN
✍ Scribed by Cuscó, Ramon; Domènech-Amador, Núria; Jiménez, Juan; Artús, Luis
- Book ID
- 121816230
- Publisher
- Institute of Pure and Applied Physics
- Year
- 2014
- Tongue
- English
- Weight
- 467 KB
- Volume
- 7
- Category
- Article
- ISSN
- 1882-0778
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
The transport behaviors of two GaN/AlGaN two-dimensional electron systems (2DESs) grown on Si substrates were studied, and a SiN x treatment employed in sample fabrication enhanced the conductance of one of the 2DESs. We study the electron heating effect in the 2DESs experimentally, with resistances
## Abstract Crack‐free GaN films have been achieved by inserting an In‐doped low‐temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants __c__ and __a__ obtained by X‐ray diffraction analysis shows that indium doping i